Fast and safe synthesis of micron germanium in an ammonia atmosphere using Mo(2)N as catalyst

Here, we reported a new method for fast and safe synthesis of a micron germanium (Ge) semiconductor. The Ge was successfully prepared from mixed GeO(2) with a low amount of MoO(3) by the NH(3) reduction method at 800 °C for an ultra-short time of 10 min. XRD patterns show that the Ge has a tetragona...

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Detalles Bibliográficos
Autores principales: Ma, Baojun, Li, Dekang, Wang, Xiaoyan, Lin, Keying
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9087885/
https://www.ncbi.nlm.nih.gov/pubmed/35547890
http://dx.doi.org/10.1039/c8ra07352j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9087885/
https://www.ncbi.nlm.nih.gov/pubmed/35547890
http://dx.doi.org/10.1039/c8ra07352j

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