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Fast and safe synthesis of micron germanium in an ammonia atmosphere using Mo(2)N as catalyst
Here, we reported a new method for fast and safe synthesis of a micron germanium (Ge) semiconductor. The Ge was successfully prepared from mixed GeO(2) with a low amount of MoO(3) by the NH(3) reduction method at 800 °C for an ultra-short time of 10 min. XRD patterns show that the Ge has a tetragona...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9087885/ https://www.ncbi.nlm.nih.gov/pubmed/35547890 http://dx.doi.org/10.1039/c8ra07352j |