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Stress-engineered growth of homoepitaxial GaN crystals using hydride vapor phase epitaxy
We report the growth of a 3.5 mm-thick bulk GaN layer using a stress-engineered homoepitaxy method without any external processes. We employ a gradient V/III ratio during the growth, which enables a 3.5 mm-thick bulk GaN layer with a smooth surface and high crystal quality to be obtained. For a cons...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9088061/ https://www.ncbi.nlm.nih.gov/pubmed/35547933 http://dx.doi.org/10.1039/c8ra06438e |