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Highly Sensitive Photodetectors Based on Monolayer MoS(2) Field-Effect Transistors
[Image: see text] Molybdenum disulfide (MoS(2)) is a promising candidate for the development of high-performance photodetectors, due to its excellent electric and optoelectronic properties. However, most of the reported MoS(2) phototransistors have adopted a back-gate field-effect transistor (FET) s...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9088949/ https://www.ncbi.nlm.nih.gov/pubmed/35559157 http://dx.doi.org/10.1021/acsomega.1c07117 |