AlGaN-Based Deep Ultraviolet Light-Emitting Diodes with Thermally Oxidized Al(x)Ga(2–x)O(3) Sidewalls

[Image: see text] AlGaN and GaN sidewalls were turned into Al(x)Ga(2–x)O(3) and Ga(2)O(3), respectively, by thermal oxidation to improve the optoelectrical characteristics of deep ultraviolet (DUV) light-emitting diodes (LEDs). The thermally oxidized Ga(2)O(3) is a single crystal with nanosized void...

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Detalles Bibliográficos
Autores principales: Wang, Tien-Yu, Lai, Wei-Chih, Sie, Syuan-Yu, Chang, Sheng-Po, Kuo, Cheng-Huang, Sheu, Jinn-Kong, Bow, Jong-Shing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9089337/
https://www.ncbi.nlm.nih.gov/pubmed/35557702
http://dx.doi.org/10.1021/acsomega.2c00813

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9089337/
https://www.ncbi.nlm.nih.gov/pubmed/35557702
http://dx.doi.org/10.1021/acsomega.2c00813

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