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Overall reaction mechanism for a full atomic layer deposition cycle of W films on TiN surfaces: first-principles study

We investigated the overall ALD reaction mechanism for W deposition on TiN surfaces based on DFT calculation as well as the detailed dissociative reactions of WF(6). Our calculated results suggest that the overall reactions of the WF(6) on the B-covered TiN surfaces are energetically much more favor...

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Detalles Bibliográficos
Autores principales:	Park, Hwanyeol, Lee, Sungwoo, Kim, Ho Jun, Woo, Daekwang, Lee, Jong Myeong, Yoon, Euijoon, Lee, Gun-Do
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2018
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9090620/ https://www.ncbi.nlm.nih.gov/pubmed/35558318 http://dx.doi.org/10.1039/c8ra07354f

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