Solution-processed amorphous ZrO(2) gate dielectric films synthesized by a non-hydrolytic sol–gel route

Solution-processed zirconium oxide (ZrO(2)) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature, and are suitable for flexible thin film transistor (TFT) devices. Precursor solutions with equimolar zirconium halide and zirconium alkoxide were prepared, and amorphous ZrO(2)...

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Detalles Bibliográficos
Autores principales: Seon, Jong-Baek, Cho, Nam-Kwang, Yoo, Gayeong, Kim, Youn Sang, Char, Kookheon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2018
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9090666/
https://www.ncbi.nlm.nih.gov/pubmed/35558330
http://dx.doi.org/10.1039/c8ra06911e

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9090666/
https://www.ncbi.nlm.nih.gov/pubmed/35558330
http://dx.doi.org/10.1039/c8ra06911e

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