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Characteristics of atomic layer deposited Gd(2)O(3) on n-GaN with an AlN layer
The interfacial and electrical properties of atomic layer deposited Gd(2)O(3) with an AlN layer on n-GaN were investigated. According to X-ray photoelectron spectroscopy spectra, the formation of Ga–O bonds that is significant near the Gd(2)O(3)/GaN interface was suppressed near the AlN/Gd(2)O(3)/Ga...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092257/ https://www.ncbi.nlm.nih.gov/pubmed/35558409 http://dx.doi.org/10.1039/c8ra09708a |