Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities

Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta(2)O(5−x)) using sputtering. We investigated the influence of zirconium as the active top electrode material in the lithographically fabricated ECM devices. A simp...

Descripción completa

Detalles Bibliográficos
Autores principales: Raeis-Hosseini, Niloufar, Chen, Shaochuan, Papavassiliou, Christos, Valov, Ilia
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092617/
https://www.ncbi.nlm.nih.gov/pubmed/35558855
http://dx.doi.org/10.1039/d2ra02456j

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092617/
https://www.ncbi.nlm.nih.gov/pubmed/35558855
http://dx.doi.org/10.1039/d2ra02456j

Ejemplares similares