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Impact of Zr top electrode on tantalum oxide-based electrochemical metallization resistive switching memory: towards synaptic functionalities

Electrochemical metallization memory (ECM) devices have been made by sub-stoichiometric deposition of a tantalum oxide switching film (Ta(2)O(5−x)) using sputtering. We investigated the influence of zirconium as the active top electrode material in the lithographically fabricated ECM devices. A simp...

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Detalles Bibliográficos
Autores principales:	Raeis-Hosseini, Niloufar, Chen, Shaochuan, Papavassiliou, Christos, Valov, Ilia
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	The Royal Society of Chemistry 2022
Materias:	Chemistry
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9092617/ https://www.ncbi.nlm.nih.gov/pubmed/35558855 http://dx.doi.org/10.1039/d2ra02456j

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