Investigation of the Integration of Strained Ge Channel with Si-Based FinFETs

In this manuscript, the integration of a strained Ge channel with Si-based FinFETs was investigated. The main focus was the preparation of high-aspect-ratio (AR) fin structures, appropriate etching topography and the growth of germanium (Ge) as a channel material with a highly compressive strain. Tw...

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Detalles Bibliográficos
Autores principales: Xu, Buqing, Wang, Guilei, Du, Yong, Miao, Yuanhao, Wu, Yuanyuan, Kong, Zhenzhen, Su, Jiale, Li, Ben, Yu, Jiahan, Radamson, Henry H.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9099481/
https://www.ncbi.nlm.nih.gov/pubmed/35564112
http://dx.doi.org/10.3390/nano12091403

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9099481/
https://www.ncbi.nlm.nih.gov/pubmed/35564112
http://dx.doi.org/10.3390/nano12091403

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