Compact Ga(2)O(3) Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition at Low Temperature

Amorphous Gallium oxide (Ga(2)O(3)) thin films were grown by plasma-enhanced atomic layer deposition using O(2) plasma as reactant and trimethylgallium as a gallium source. The growth rate of the Ga(2)O(3) films was about 0.6 Å/cycle and was acquired at a temperature ranging from 80 to 250 °C. The i...

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Detalles Bibliográficos
Autores principales: Yang, Yue, Zhang, Xiao-Ying, Wang, Chen, Ren, Fang-Bin, Zhu, Run-Feng, Hsu, Chia-Hsun, Wu, Wan-Yu, Wuu, Dong-Sing, Gao, Peng, Ruan, Yu-Jiao, Lien, Shui-Yang, Zhu, Wen-Zhang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9100640/
https://www.ncbi.nlm.nih.gov/pubmed/35564219
http://dx.doi.org/10.3390/nano12091510

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9100640/
https://www.ncbi.nlm.nih.gov/pubmed/35564219
http://dx.doi.org/10.3390/nano12091510

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