Optoelectronic Properties of α-MoO(3) Tuned by H Dopant in Different Concentration

The optoelectronic properties of layered α-MoO(3) are greatly limited due to its wide band gap and low carrier concentration. The insertion of hydrogen (H) can effectively tune the band structure and carrier concentration of MoO(3). Herein, first-principles calculations were performed to unravel the...

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Detalles Bibliográficos
Autores principales: Huang, Xi, Xu, Xin, Huang, Jiawei, Zhang, Zheyu, Gao, Yujia, Lu, Zhengli, Wu, Zhenyuan, Luo, Tian, Cai, Yating, Qu, Yating, Liu, Pengyi, Hu, Cuiying, Shi, Tingting, Xie, Weiguang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9101102/
https://www.ncbi.nlm.nih.gov/pubmed/35591711
http://dx.doi.org/10.3390/ma15093378

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9101102/
https://www.ncbi.nlm.nih.gov/pubmed/35591711
http://dx.doi.org/10.3390/ma15093378

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