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Optoelectronic Properties of α-MoO(3) Tuned by H Dopant in Different Concentration
The optoelectronic properties of layered α-MoO(3) are greatly limited due to its wide band gap and low carrier concentration. The insertion of hydrogen (H) can effectively tune the band structure and carrier concentration of MoO(3). Herein, first-principles calculations were performed to unravel the...
Autores principales: | , , , , , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9101102/ https://www.ncbi.nlm.nih.gov/pubmed/35591711 http://dx.doi.org/10.3390/ma15093378 |