N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation

High-temperature nitridation is commonly thought of as a necessary process to obtain N-polar GaN films on a sapphire substrate. In this work, high-quality N-polar GaN films were grown on a vicinal sapphire substrate with a 100 nm high-temperature (HT) AlN buffer layer (high V/III ratio) and without...

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Detalles Bibliográficos
Autores principales: Su, Zhaole, Li, Yangfeng, Hu, Xiaotao, Song, Yimeng, Kong, Rui, Deng, Zhen, Ma, Ziguang, Du, Chunhua, Wang, Wenxin, Jia, Haiqiang, Chen, Hong, Jiang, Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103289/
https://www.ncbi.nlm.nih.gov/pubmed/35591340
http://dx.doi.org/10.3390/ma15093005

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103289/
https://www.ncbi.nlm.nih.gov/pubmed/35591340
http://dx.doi.org/10.3390/ma15093005

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