Radiation-Induced Nucleation and Growth of CaSi(2) Crystals, Both Directly during the Epitaxial CaF(2) Growth and after the CaF(2) Film Formation

The radiation-induced phenomena of CaSi(2) crystal growth were investigated, both directly during the epitaxial CaF(2) growth on Si (111) and film irradiation with fast electrons on Si (111) after its formation, while maintaining the specified film thickness, substrate temperature and radiation dose...

Descripción completa

Detalles Bibliográficos
Autores principales: Dvurechenskii, Anatoly V., Kacyuba, Aleksey V., Kamaev, Gennadiy N., Volodin, Vladimir A., Smagina, Zhanna V.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103316/
https://www.ncbi.nlm.nih.gov/pubmed/35564116
http://dx.doi.org/10.3390/nano12091407

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103316/
https://www.ncbi.nlm.nih.gov/pubmed/35564116
http://dx.doi.org/10.3390/nano12091407

Ejemplares similares