Nanoscale Doping and Its Impact on the Ferroelectric and Piezoelectric Properties of Hf(0.5)Zr(0.5)O(2)

Ferroelectric hafnium oxide thin films—the most promising materials in microelectronics’ non-volatile memory—exhibit both unconventional ferroelectricity and unconventional piezoelectricity. Their exact origin remains controversial, and the relationship between ferroelectric and piezoelectric proper...

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Detalles Bibliográficos
Autores principales: Chouprik, Anastasia, Kirtaev, Roman, Korostylev, Evgeny, Mikheev, Vitalii, Spiridonov, Maxim, Negrov, Dmitrii
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103790/
https://www.ncbi.nlm.nih.gov/pubmed/35564195
http://dx.doi.org/10.3390/nano12091483

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9103790/
https://www.ncbi.nlm.nih.gov/pubmed/35564195
http://dx.doi.org/10.3390/nano12091483

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