Comparative Study of Aluminum-Doped Zinc Oxide, Gallium-Doped Zinc Oxide and Indium-Doped Tin Oxide Thin Films Deposited by Radio Frequency Magnetron Sputtering

A timely replacement of the rather expensive indium-doped tin oxide with aluminum-doped zinc oxide is hindered by the poor uniformity of electronic properties when deposited by magnetron sputtering. Recent results demonstrated the ability to improve the uniformity and to decrease the resistivity of...

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Detalles Bibliográficos
Autores principales: Khan, Shadab, Stamate, Eugen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104591/
https://www.ncbi.nlm.nih.gov/pubmed/35564248
http://dx.doi.org/10.3390/nano12091539

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9104591/
https://www.ncbi.nlm.nih.gov/pubmed/35564248
http://dx.doi.org/10.3390/nano12091539

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