Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the...

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Detalles Bibliográficos
Autores principales: Gil-Corrales, John A., Morales, Alvaro L., Behiye Yücel, Melike, Kasapoglu, Esin, Duque, Carlos A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9105204/
https://www.ncbi.nlm.nih.gov/pubmed/35563560
http://dx.doi.org/10.3390/ijms23095169

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9105204/
https://www.ncbi.nlm.nih.gov/pubmed/35563560
http://dx.doi.org/10.3390/ijms23095169

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