Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation...

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Detalles Bibliográficos
Autores principales: Yang, Song, Deng, Ningkang, Qu, Yongfeng, Wang, Kang, Yuan, Yuan, Hu, Wenbo, Wu, Shengli, Wang, Hongxing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9105243/
https://www.ncbi.nlm.nih.gov/pubmed/35591449
http://dx.doi.org/10.3390/ma15093115

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9105243/
https://www.ncbi.nlm.nih.gov/pubmed/35591449
http://dx.doi.org/10.3390/ma15093115

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