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Argon Ion Beam Current Dependence of Si-Si Surface Activated Bonding

In order to optimize the process parameters of Si-Si wafer direct bonding at room temperature, Si-Si surface activated bonding (SAB) was performed, and the effect of the argon ion beam current for surface activation treatment on the Si-Si bonding quality was investigated. For the surface activation...

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Detalles Bibliográficos
Autores principales:	Yang, Song, Deng, Ningkang, Qu, Yongfeng, Wang, Kang, Yuan, Yuan, Hu, Wenbo, Wu, Shengli, Wang, Hongxing
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9105243/ https://www.ncbi.nlm.nih.gov/pubmed/35591449 http://dx.doi.org/10.3390/ma15093115

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