High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In(2)O(3) channel layers

Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed...

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Detalles Bibliográficos
Autores principales: Xu, Xiaofen, He, Gang, Jiang, Shanshan, Wang, Leini, Wang, Wenhao, Liu, Yanmei, Gao, Qian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2022
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9115870/
https://www.ncbi.nlm.nih.gov/pubmed/35702432
http://dx.doi.org/10.1039/d2ra01051h

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9115870/
https://www.ncbi.nlm.nih.gov/pubmed/35702432
http://dx.doi.org/10.1039/d2ra01051h

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