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High performance enhancement-mode thin-film transistor with graphene quantum dot-decorated In(2)O(3) channel layers
Due to the quantum confinement and edge effects, there has been ongoing enthusiasm to provide deep insight into graphene quantum dots (GQDs), serving as attractive semiconductor materials. To demonstrate the potential applications of GQDs in electronic devices, this work presents solution-processed...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2022
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9115870/ https://www.ncbi.nlm.nih.gov/pubmed/35702432 http://dx.doi.org/10.1039/d2ra01051h |