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Deep Etching of Silicon Based on Metal-Assisted Chemical Etching

[Image: see text] A deep etching method for silicon “micro”structures was successfully developed. This wet etching process is based on metal-assisted chemical etching (MACE), which was previously mainly utilized to etch the features that have lateral dimensions of “nanometers.” In this novel MACE, t...

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Autores principales: Nur’aini, Anafi, Oh, Ilwhan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9118418/
https://www.ncbi.nlm.nih.gov/pubmed/35601341
http://dx.doi.org/10.1021/acsomega.2c01113
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author Nur’aini, Anafi
Oh, Ilwhan
author_facet Nur’aini, Anafi
Oh, Ilwhan
author_sort Nur’aini, Anafi
collection PubMed
description [Image: see text] A deep etching method for silicon “micro”structures was successfully developed. This wet etching process is based on metal-assisted chemical etching (MACE), which was previously mainly utilized to etch the features that have lateral dimensions of “nanometers.” In this novel MACE, the critical improvement was to promote the “out-of-plane” mass transfer at the metal/Si interface with an ultrathin metal film. This enabled us to etch micrometer-wide holes, which was previously challenging due to the mass transport limitation. In addition, it was found that when ethanol was used as a solvent instead of water, the formation of porous defects was suppressed. Under the optimized etch conditions, deep (>200 μm) and vertical (>88°) holes could be carved out at a fast etch rate (>0.4 μm/min). This novel deep MACE will find utility in applications such as microelectromechanical systems (MEMS) devices or biosensors.
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spelling pubmed-91184182022-05-20 Deep Etching of Silicon Based on Metal-Assisted Chemical Etching Nur’aini, Anafi Oh, Ilwhan ACS Omega [Image: see text] A deep etching method for silicon “micro”structures was successfully developed. This wet etching process is based on metal-assisted chemical etching (MACE), which was previously mainly utilized to etch the features that have lateral dimensions of “nanometers.” In this novel MACE, the critical improvement was to promote the “out-of-plane” mass transfer at the metal/Si interface with an ultrathin metal film. This enabled us to etch micrometer-wide holes, which was previously challenging due to the mass transport limitation. In addition, it was found that when ethanol was used as a solvent instead of water, the formation of porous defects was suppressed. Under the optimized etch conditions, deep (>200 μm) and vertical (>88°) holes could be carved out at a fast etch rate (>0.4 μm/min). This novel deep MACE will find utility in applications such as microelectromechanical systems (MEMS) devices or biosensors. American Chemical Society 2022-05-02 /pmc/articles/PMC9118418/ /pubmed/35601341 http://dx.doi.org/10.1021/acsomega.2c01113 Text en © 2022 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by-nc-nd/4.0/Permits non-commercial access and re-use, provided that author attribution and integrity are maintained; but does not permit creation of adaptations or other derivative works (https://creativecommons.org/licenses/by-nc-nd/4.0/).
spellingShingle Nur’aini, Anafi
Oh, Ilwhan
Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title_full Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title_fullStr Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title_full_unstemmed Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title_short Deep Etching of Silicon Based on Metal-Assisted Chemical Etching
title_sort deep etching of silicon based on metal-assisted chemical etching
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9118418/
https://www.ncbi.nlm.nih.gov/pubmed/35601341
http://dx.doi.org/10.1021/acsomega.2c01113
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