Controlling resistive switching behavior in the solution processed SiO(2-x) device by the insertion of TiO(2) nanoparticles

The resistive switching behavior of the solution processed SiO(x) device was investigated by inserting TiO(2) nanoparticles (NPs). Compared to the pristine SiO(x) device, the TiO(2) NPs inserted SiO(x) (SiO(x)@TiO(2) NPs) device achieves outstanding switching characteristics, namely a higher ratio o...

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Detalles Bibliográficos
Autores principales: Kwon, Sera, Kim, Min-Jung, Lim, Dong-Hyeok, Jeong, Kwangsik, Chung, Kwun-Bum
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9120027/
https://www.ncbi.nlm.nih.gov/pubmed/35589798
http://dx.doi.org/10.1038/s41598-022-12476-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9120027/
https://www.ncbi.nlm.nih.gov/pubmed/35589798
http://dx.doi.org/10.1038/s41598-022-12476-y

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