Spectroscopic Ellipsometry Study on Tuning the Electrical and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition

[Image: see text] This work reports the ellipsometry analysis of atomic layer deposition (ALD) films of ZnO doped with Zr to determine parameters like free carrier concentration and mobility. Thin films of zinc oxide (ZnO) and Zr-doped ZnO of thickness ∼100 nm were prepared by atomic layer depositio...

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Detalles Bibliográficos
Autores principales: Bohórquez, Carolina, Bakkali, Hicham, Delgado, Juan J., Blanco, Eduardo, Herrera, Manuel, Domínguez, Manuel
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2022
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9121516/
https://www.ncbi.nlm.nih.gov/pubmed/35607319
http://dx.doi.org/10.1021/acsaelm.1c01026

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9121516/
https://www.ncbi.nlm.nih.gov/pubmed/35607319
http://dx.doi.org/10.1021/acsaelm.1c01026

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