Artificial Anisotropy in Ge(2)Sb(2)Te(5) Thin Films after Femtosecond Laser Irradiation

Ge(2)Sb(2)Te(5) (GST225) looks to be a promising material for rewritable memory devices due to its relatively easy processing and high optical and electrophysical contrast for the crystalline and amorphous phases. In the present work, we combined the possibilities of crystallization and anisotropic...

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Detalles Bibliográficos
Autores principales: Kolchin, Aleksandr, Shuleiko, Dmitrii, Martyshov, Mikhail, Efimova, Aleksandra, Golovan, Leonid, Presnov, Denis, Kunkel, Tatiana, Glukhenkaya, Victoriia, Lazarenko, Petr, Kashkarov, Pavel, Zabotnov, Stanislav, Kozyukhin, Sergey
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143183/
https://www.ncbi.nlm.nih.gov/pubmed/35629526
http://dx.doi.org/10.3390/ma15103499

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143183/
https://www.ncbi.nlm.nih.gov/pubmed/35629526
http://dx.doi.org/10.3390/ma15103499

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