Improved I(on)/I(off) Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al(0.5)GaN Etch-Stop Layer

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al(0.5)GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al(0.5)GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the devi...

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Detalles Bibliográficos
Autores principales: Wang, Hsiang-Chun, Liu, Chia-Hao, Huang, Chong-Rong, Shih, Min-Hung, Chiu, Hsien-Chin, Kao, Hsuan-Ling, Liu, Xinke
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143610/
https://www.ncbi.nlm.nih.gov/pubmed/35629530
http://dx.doi.org/10.3390/ma15103503

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143610/
https://www.ncbi.nlm.nih.gov/pubmed/35629530
http://dx.doi.org/10.3390/ma15103503

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