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Improved I(on)/I(off) Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al(0.5)GaN Etch-Stop Layer

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al(0.5)GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al(0.5)GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the devi...

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Detalles Bibliográficos
Autores principales:	Wang, Hsiang-Chun, Liu, Chia-Hao, Huang, Chong-Rong, Shih, Min-Hung, Chiu, Hsien-Chin, Kao, Hsuan-Ling, Liu, Xinke
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143610/ https://www.ncbi.nlm.nih.gov/pubmed/35629530 http://dx.doi.org/10.3390/ma15103503

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