A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors

An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N(+)-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron s...

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Detalles Bibliográficos
Autores principales: Duan, Xinlv, Lu, Congyan, Chuai, Xichen, Chen, Qian, Yang, Guanhua, Geng, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143719/
https://www.ncbi.nlm.nih.gov/pubmed/35630119
http://dx.doi.org/10.3390/mi13050652

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143719/
https://www.ncbi.nlm.nih.gov/pubmed/35630119
http://dx.doi.org/10.3390/mi13050652

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