A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors

An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N(+)-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron s...

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Autores principales: Duan, Xinlv, Lu, Congyan, Chuai, Xichen, Chen, Qian, Yang, Guanhua, Geng, Di
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143719/
https://www.ncbi.nlm.nih.gov/pubmed/35630119
http://dx.doi.org/10.3390/mi13050652
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author Duan, Xinlv
Lu, Congyan
Chuai, Xichen
Chen, Qian
Yang, Guanhua
Geng, Di
author_facet Duan, Xinlv
Lu, Congyan
Chuai, Xichen
Chen, Qian
Yang, Guanhua
Geng, Di
author_sort Duan, Xinlv
collection PubMed
description An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N(+)-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiO(x) ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility (μ(FE)) of 23.06 cm(2)/Vs. The channel-width-normalized source/drain series resistance (R(SD)W) extracted using the transmission line method (TLM) is approximately as low as 9.4 Ω·cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs.
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spelling pubmed-91437192022-05-29 A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors Duan, Xinlv Lu, Congyan Chuai, Xichen Chen, Qian Yang, Guanhua Geng, Di Micromachines (Basel) Article An inter-layer dielectric (ILD) deposition process to simultaneously form the conductive regions of self-aligned (SA) coplanar In-Ga-Zn-O (IGZO) thin-film transistors (TFTs) is demonstrated. N(+)-IGZO regions and excellent ohmic contact can be obtained without additional steps by using a magnetron sputtering process to deposit a SiO(x) ILD. The fabricated IGZO TFTs show a subthreshold swing (SS) of 94.16 mV/decade and a linear-region field-effect mobility (μ(FE)) of 23.06 cm(2)/Vs. The channel-width-normalized source/drain series resistance (R(SD)W) extracted using the transmission line method (TLM) is approximately as low as 9.4 Ω·cm. The fabricated ring oscillator (RO) with a maximum oscillation frequency of 1.75 MHz also verifies the applicability of the TFTs. MDPI 2022-04-19 /pmc/articles/PMC9143719/ /pubmed/35630119 http://dx.doi.org/10.3390/mi13050652 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Duan, Xinlv
Lu, Congyan
Chuai, Xichen
Chen, Qian
Yang, Guanhua
Geng, Di
A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title_full A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title_fullStr A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title_full_unstemmed A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title_short A Direct n(+)-Formation Process by Magnetron Sputtering an Inter-Layer Dielectric for Self-Aligned Coplanar Indium Gallium Zinc Oxide Thin-Film Transistors
title_sort direct n(+)-formation process by magnetron sputtering an inter-layer dielectric for self-aligned coplanar indium gallium zinc oxide thin-film transistors
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9143719/
https://www.ncbi.nlm.nih.gov/pubmed/35630119
http://dx.doi.org/10.3390/mi13050652
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