Novel Modeling Approach to Analyze Threshold Voltage Variability in Short Gate-Length (15–22 nm) Nanowire FETs with Various Channel Diameters

In this study, threshold voltage (V(th)) variability was investigated in silicon nanowire field-effect transistors (SNWFETs) with short gate-lengths of 15–22 nm and various channel diameters (D(NW)) of 7, 9, and 12 nm. Linear slope and nonzero y-intercept were observed in a Pelgrom plot of the stand...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Seunghwan, Yoon, Jun-Sik, Lee, Junjong, Jeong, Jinsu, Yun, Hyeok, Lim, Jaewan, Lee, Sanguk, Baek, Rock-Hyun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144030/
https://www.ncbi.nlm.nih.gov/pubmed/35630942
http://dx.doi.org/10.3390/nano12101721

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144030/
https://www.ncbi.nlm.nih.gov/pubmed/35630942
http://dx.doi.org/10.3390/nano12101721

Ejemplares similares