New n-p Junction Floating Gate to Enhance the Operation Performance of a Semiconductor Memory Device

To lower the charge leakage of a floating gate device and improve the operation performance of memory devices toward a smaller structure size and a higher component capability, two new types of floating gates composed of pn-type polysilicon or np-type polysilicon were developed in this study. Their...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Yi-Yueh, Lee, Feng-Ming, Lin, Yu-Yu, Lee, Chih-Hsiung, Chen, Wei-Chen, Shu, Che-Kai, Lin, Su-Jien, Chang, Shou-Yi, Lu, Chih-Yuan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144071/
https://www.ncbi.nlm.nih.gov/pubmed/35629667
http://dx.doi.org/10.3390/ma15103640

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144071/
https://www.ncbi.nlm.nih.gov/pubmed/35629667
http://dx.doi.org/10.3390/ma15103640

Ejemplares similares