A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floati...

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Detalles Bibliográficos
Autores principales: Zhang, Xiaodong, Shen, Pei, Zou, Zhijie, Song, Mingxin, Zhang, Linlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144643/
https://www.ncbi.nlm.nih.gov/pubmed/35630201
http://dx.doi.org/10.3390/mi13050734

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144643/
https://www.ncbi.nlm.nih.gov/pubmed/35630201
http://dx.doi.org/10.3390/mi13050734

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