A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer

In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floati...

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Detalles Bibliográficos
Autores principales: Zhang, Xiaodong, Shen, Pei, Zou, Zhijie, Song, Mingxin, Zhang, Linlin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144643/
https://www.ncbi.nlm.nih.gov/pubmed/35630201
http://dx.doi.org/10.3390/mi13050734
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author Zhang, Xiaodong
Shen, Pei
Zou, Zhijie
Song, Mingxin
Zhang, Linlin
author_facet Zhang, Xiaodong
Shen, Pei
Zou, Zhijie
Song, Mingxin
Zhang, Linlin
author_sort Zhang, Xiaodong
collection PubMed
description In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floating layer increases the distributed path resistance below the buffer layer to eliminate the snapback phenomenon. In addition, the P-floating layer acts as an amplifying stage for the hole currents’ injection. The snapback-free structure features a half-cell pitch of 10 μm. For the same forward voltage drop, the turn-off loss of the MP-IGBT structure is reduced by 42%.
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spelling pubmed-91446432022-05-29 A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer Zhang, Xiaodong Shen, Pei Zou, Zhijie Song, Mingxin Zhang, Linlin Micromachines (Basel) Article In this paper, a 4H–SiC IGBT with a multifunctional P-floating layer (MP-IGBT) is proposed and investigated by Silvaco TCAD simulations. Compared with the conventional 4H–SiC field stop IGBT (FS-IGBT), the MP-IGBT structure features a P-floating layer structure under the N-buffer layer. The P-floating layer increases the distributed path resistance below the buffer layer to eliminate the snapback phenomenon. In addition, the P-floating layer acts as an amplifying stage for the hole currents’ injection. The snapback-free structure features a half-cell pitch of 10 μm. For the same forward voltage drop, the turn-off loss of the MP-IGBT structure is reduced by 42%. MDPI 2022-05-03 /pmc/articles/PMC9144643/ /pubmed/35630201 http://dx.doi.org/10.3390/mi13050734 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Zhang, Xiaodong
Shen, Pei
Zou, Zhijie
Song, Mingxin
Zhang, Linlin
A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title_full A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title_fullStr A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title_full_unstemmed A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title_short A Snapback-Free and Low Turn-Off Loss 15 kV 4H–SiC IGBT with Multifunctional P-Floating Layer
title_sort snapback-free and low turn-off loss 15 kv 4h–sic igbt with multifunctional p-floating layer
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9144643/
https://www.ncbi.nlm.nih.gov/pubmed/35630201
http://dx.doi.org/10.3390/mi13050734
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