Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was investigated by accelerated stress tests. The...

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Detalles Bibliográficos
Autores principales: Yang, Yafang, Liu, Hongxia, Yang, Kun, Gao, Zihou, Liu, Zixu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145023/
https://www.ncbi.nlm.nih.gov/pubmed/35630275
http://dx.doi.org/10.3390/mi13050808

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145023/
https://www.ncbi.nlm.nih.gov/pubmed/35630275
http://dx.doi.org/10.3390/mi13050808

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