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Investigation of Negative Bias Temperature Instability Effect in Nano PDSOI PMOSFET

The Negative Bias Temperature Instability (NBTI) effect of partially depleted silicon-on-insulator (PDSOI) PMOSFET based on 130 nm is investigated. First, the effect of NBTI on the IV characteristics and parameter degradation of T-Gate PDSOI PMOSFET was investigated by accelerated stress tests. The...

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Detalles Bibliográficos
Autores principales:	Yang, Yafang, Liu, Hongxia, Yang, Kun, Gao, Zihou, Liu, Zixu
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145023/ https://www.ncbi.nlm.nih.gov/pubmed/35630275 http://dx.doi.org/10.3390/mi13050808

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