Mechanisms of Scaling Effect for Emerging Nanoscale Interconnect Materials

The resistivity of Cu interconnects increases rapidly with continuously scaling down due to scatterings, causing a major challenge for future nodes in M0 and M1 layers. Here, A Boltzmann-transport-equation-based Monte Carlo simulator, including all the major scattering mechanisms of interconnects, i...

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Detalles Bibliográficos
Autores principales: Zhao, Kai, Hu, Yuanzhao, Du, Gang, Zhao, Yudi, Dong, Junchen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145433/
https://www.ncbi.nlm.nih.gov/pubmed/35630982
http://dx.doi.org/10.3390/nano12101760

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9145433/
https://www.ncbi.nlm.nih.gov/pubmed/35630982
http://dx.doi.org/10.3390/nano12101760

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