Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-d...

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Detalles Bibliográficos
Autores principales: Tian, Ye, Feng, Peng, Zhu, Chenqi, Chen, Xinchi, Xu, Ce, Esendag, Volkan, Martinez de Arriba, Guillem, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146535/
https://www.ncbi.nlm.nih.gov/pubmed/35629563
http://dx.doi.org/10.3390/ma15103536

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146535/
https://www.ncbi.nlm.nih.gov/pubmed/35629563
http://dx.doi.org/10.3390/ma15103536

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