Cargando…

Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance

Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-d...

Descripción completa

Detalles Bibliográficos
Autores principales: Tian, Ye, Feng, Peng, Zhu, Chenqi, Chen, Xinchi, Xu, Ce, Esendag, Volkan, Martinez de Arriba, Guillem, Wang, Tao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146535/
https://www.ncbi.nlm.nih.gov/pubmed/35629563
http://dx.doi.org/10.3390/ma15103536
_version_ 1784716587163451392
author Tian, Ye
Feng, Peng
Zhu, Chenqi
Chen, Xinchi
Xu, Ce
Esendag, Volkan
Martinez de Arriba, Guillem
Wang, Tao
author_facet Tian, Ye
Feng, Peng
Zhu, Chenqi
Chen, Xinchi
Xu, Ce
Esendag, Volkan
Martinez de Arriba, Guillem
Wang, Tao
author_sort Tian, Ye
collection PubMed
description Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-doped n++-Al(0.01)Ga(0.99)N and undoped GaN instead of widely used multiple pairs of heavily silicon-doped n++-GaN and undoped GaN for the fabrication of a lattice-matched distributed Bragg reflector (DBR) by using an electrochemical (EC) etching technique, where the lattice mismatch between Al(0.01)Ga(0.99)N and GaN can be safely ignored. By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Our work demonstrates that the NP-Al(0.01)Ga(0.99)N/undoped GaN-based DBR exhibits a much smoother surface, enhanced reflectivity and a wider stopband than the NP-GaN/undoped GaN-based DBR. Furthermore, the NP-Al(0.01)Ga(0.99)N/undoped GaN-based DBR sample with a large size (up to 1 mm in width) can be obtained, while a standard NP-GaN/undoped GaN-based DBR sample obtained is typically on a scale of a few 100 μm in width. Finally, a series of DBR structures with high performance, ranging from blue to dark yellow, was demonstrated by using multiple pairs of n++-Al(0.01)Ga(0.99)N and undoped GaN.
format Online
Article
Text
id pubmed-9146535
institution National Center for Biotechnology Information
language English
publishDate 2022
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-91465352022-05-29 Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance Tian, Ye Feng, Peng Zhu, Chenqi Chen, Xinchi Xu, Ce Esendag, Volkan Martinez de Arriba, Guillem Wang, Tao Materials (Basel) Article Heavy silicon-doping in GaN generally causes a rough surface and saturated conductivity, while heavily silicon-doped n++-AlGaN with ≤5% aluminum can maintain an atomically flat surface and exhibit enhanced conductivity. Given this major advantage, we propose using multiple pairs of heavily silicon-doped n++-Al(0.01)Ga(0.99)N and undoped GaN instead of widely used multiple pairs of heavily silicon-doped n++-GaN and undoped GaN for the fabrication of a lattice-matched distributed Bragg reflector (DBR) by using an electrochemical (EC) etching technique, where the lattice mismatch between Al(0.01)Ga(0.99)N and GaN can be safely ignored. By means of using the EC etching technique, the n++-layers can be converted into nanoporous (NP) layers whilst the undoped GaN remains intact, leading to a significantly high contrast in refractive index between NP-layer and undoped GaN and thus forming a DBR. Our work demonstrates that the NP-Al(0.01)Ga(0.99)N/undoped GaN-based DBR exhibits a much smoother surface, enhanced reflectivity and a wider stopband than the NP-GaN/undoped GaN-based DBR. Furthermore, the NP-Al(0.01)Ga(0.99)N/undoped GaN-based DBR sample with a large size (up to 1 mm in width) can be obtained, while a standard NP-GaN/undoped GaN-based DBR sample obtained is typically on a scale of a few 100 μm in width. Finally, a series of DBR structures with high performance, ranging from blue to dark yellow, was demonstrated by using multiple pairs of n++-Al(0.01)Ga(0.99)N and undoped GaN. MDPI 2022-05-14 /pmc/articles/PMC9146535/ /pubmed/35629563 http://dx.doi.org/10.3390/ma15103536 Text en © 2022 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Tian, Ye
Feng, Peng
Zhu, Chenqi
Chen, Xinchi
Xu, Ce
Esendag, Volkan
Martinez de Arriba, Guillem
Wang, Tao
Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title_full Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title_fullStr Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title_full_unstemmed Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title_short Nearly Lattice-Matched GaN Distributed Bragg Reflectors with Enhanced Performance
title_sort nearly lattice-matched gan distributed bragg reflectors with enhanced performance
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146535/
https://www.ncbi.nlm.nih.gov/pubmed/35629563
http://dx.doi.org/10.3390/ma15103536
work_keys_str_mv AT tianye nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT fengpeng nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT zhuchenqi nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT chenxinchi nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT xuce nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT esendagvolkan nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT martinezdearribaguillem nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance
AT wangtao nearlylatticematchedgandistributedbraggreflectorswithenhancedperformance