Cargando…
Memristive Characteristics of the Single-Layer P-Type CuAlO(2) and N-Type ZnO Memristors
Memristive behaviors are demonstrated in the single-layer oxide-based devices. The conduction states can be continually modulated with different pulses or voltage sweeps. Here, the p-CuAlO(2)- and n-ZnO-based memristors show the opposite bias polarity dependence with the help of tip electrode. It is...
| Autores principales: | , , , |
|---|---|
| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2022
|
| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146962/ https://www.ncbi.nlm.nih.gov/pubmed/35629662 http://dx.doi.org/10.3390/ma15103637 |