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Memristive Characteristics of the Single-Layer P-Type CuAlO(2) and N-Type ZnO Memristors

Memristive behaviors are demonstrated in the single-layer oxide-based devices. The conduction states can be continually modulated with different pulses or voltage sweeps. Here, the p-CuAlO(2)- and n-ZnO-based memristors show the opposite bias polarity dependence with the help of tip electrode. It is...

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Detalles Bibliográficos
Autores principales:	Song, Wenqing, Li, Xinmiao, Fang, Ruihua, Zhang, Lei
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2022
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146962/ https://www.ncbi.nlm.nih.gov/pubmed/35629662 http://dx.doi.org/10.3390/ma15103637

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