Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device

We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelect...

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Detalles Bibliográficos
Autores principales: Zhao, Ying, Wang, Jiawei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146990/
https://www.ncbi.nlm.nih.gov/pubmed/35630173
http://dx.doi.org/10.3390/mi13050707

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146990/
https://www.ncbi.nlm.nih.gov/pubmed/35630173
http://dx.doi.org/10.3390/mi13050707

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