Cargando…
Variable Range Hopping Model Based on Gaussian Disordered Organic Semiconductor for Seebeck Effect in Thermoelectric Device
We investigate the carrier concentration dependent Seebeck coefficient in Gaussian disordered organic semiconductors (GD-OSs) for thermoelectric device applications. Based on the variable-range hopping (VRH) theory, a general model predicting the Seebeck effect is developed to reveal the thermoelect...
Autores principales: | Zhao, Ying, Wang, Jiawei |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2022
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9146990/ https://www.ncbi.nlm.nih.gov/pubmed/35630173 http://dx.doi.org/10.3390/mi13050707 |
Ejemplares similares
-
Thermoelectric Seebeck effect in oxide-based resistive switching memory
por: Wang, Ming, et al.
Publicado: (2014) -
Model of the Thermoelectric Properties of Anisotropic
Organic Semiconductors
por: Ihnatsenka, S.
Publicado: (2021) -
Effect of the Order-Disorder Transition on the Seebeck Coefficient of Nanostructured Thermoelectric Cu(2)ZnSnS(4)
por: Isotta, Eleonora, et al.
Publicado: (2019) -
Spin Seebeck effect and thermoelectric phenomena in superconducting hybrids with magnetic textures or spin-orbit coupling
por: Bathen, Marianne Etzelmüller, et al.
Publicado: (2017) -
Thermoelectric Signal Enhancement by Reconciling the Spin Seebeck and Anomalous Nernst Effects in Ferromagnet/Non-magnet Multilayers
por: Lee, Kyeong-Dong, et al.
Publicado: (2015)