Growth of Highly c-Axis Oriented AlScN Films on Commercial Substrates

In this work, we present a method for growing highly c-axis oriented aluminum scandium nitride (AlScN) thin films on (100) silicon (Si), silicon dioxide (SiO(2)) and epitaxial polysilicon (poly-Si) substrates using a substrate independent approach. The presented method offers great advantages in app...

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Detalles Bibliográficos
Autores principales: Su, Jingxiang, Fichtner, Simon, Ghori, Muhammad Zubair, Wolff, Niklas, Islam, Md. Redwanul, Lotnyk, Andriy, Kaden, Dirk, Niekiel, Florian, Kienle, Lorenz, Wagner, Bernhard, Lofink, Fabian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147036/
https://www.ncbi.nlm.nih.gov/pubmed/35630250
http://dx.doi.org/10.3390/mi13050783

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147036/
https://www.ncbi.nlm.nih.gov/pubmed/35630250
http://dx.doi.org/10.3390/mi13050783

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