Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P(+) ion-implanted, la...

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Detalles Bibliográficos
Autores principales: Wu, Jingmin, Yang, Xiang, Wang, Fengxuan, Guo, Zhiyu, Fan, Zhongchao, He, Zhi, Yang, Fuhua
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147244/
https://www.ncbi.nlm.nih.gov/pubmed/35630270
http://dx.doi.org/10.3390/mi13050804

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147244/
https://www.ncbi.nlm.nih.gov/pubmed/35630270
http://dx.doi.org/10.3390/mi13050804

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