Characteristics of Activation Rate and Damage of Ion-Implanted Phosphorous in 4H-SiC after Different Annealing by Optical Absorption

We investigated the ellipsometer-based characterization method being used to quickly evaluate the depth of the damage layer in ion-implanted 4H-SiC. This method had the advantages of low cost, convenience, and non-destructiveness. Optical absorption of n-type 4H-SiC substrate, P(+) ion-implanted, laser-annealed, and conventional high-temperature annealed wafers were investigated at room temperature. Three peaks were observed in the absorption spectra collected for various samples. The degree of electrical activation after laser annealing or high-temperature annealing was evaluated qualitatively from the absorption peak intensity at 2.67 eV. The circular transmission line method (CTLM) results were consistent with the optical absorption results. However, it was found that the effective carrier concentration after laser annealing was significantly lower than that after high-temperature annealing.