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Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation

We have experimentally investigated the impact of vertical and lateral scaling on low-field electron mobility (µ) in InAlN/GaN high-electron-mobility transistors (HEMTs). It is found that µ reduces as InAlN barrier (T(B)) and gate length (L(G)) scale down but increases with the scaled source–drain d...

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Detalles Bibliográficos
Autores principales: Cui, Peng, Zeng, Yuping
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147373/
https://www.ncbi.nlm.nih.gov/pubmed/35630940
http://dx.doi.org/10.3390/nano12101718