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Effect of Device Scaling on Electron Mobility in Nanoscale GaN HEMTs with Polarization Charge Modulation
We have experimentally investigated the impact of vertical and lateral scaling on low-field electron mobility (µ) in InAlN/GaN high-electron-mobility transistors (HEMTs). It is found that µ reduces as InAlN barrier (T(B)) and gate length (L(G)) scale down but increases with the scaled source–drain d...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2022
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147373/ https://www.ncbi.nlm.nih.gov/pubmed/35630940 http://dx.doi.org/10.3390/nano12101718 |