Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V characteristics and transient capacitance were mea...

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Detalles Bibliográficos
Autores principales: Zhang, Haitao, Kang, Xuanwu, Zheng, Yingkui, Wei, Ke, Wu, Hao, Liu, Xinyu, Ye, Tianchun, Jin, Zhi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2022
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147414/
https://www.ncbi.nlm.nih.gov/pubmed/35630215
http://dx.doi.org/10.3390/mi13050748

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC9147414/
https://www.ncbi.nlm.nih.gov/pubmed/35630215
http://dx.doi.org/10.3390/mi13050748

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